ENEE413: Advanced Electronic Devices

Credits: 3

Description

Prerequisite: Minimum grade of C- in ENEE313 or ENEE304.
Restriction: Must be in one of the following programs (Engineering: Computer; Engineering: Electrical) ; and permission of ENGR-Electrical & Computer Engineering department.
Advanced devices and their physical operation, providing a thorough description of those parts not usually covered in introductory electronics courses. These include Schottky and tunnel junctions, negative resistance devices used in wireless communication, homo-structure compound semiconductor transistors, hetero-structure (quantum effect) transistors, non-volatile memory devices, photonic devices such as LEDs and solid-state lasers, solar cells, photo-detectors and camera imagers, as well as bio-related components. Special consideration will be given to achieve an understanding of noise processes that limit electronic device performance. In all cases, system-level applications will be illustrated.

Semesters Offered

Spring 2018, Spring 2019, Spring 2020, Spring 2021, Spring 2022, Spring 2023, Spring 2024, Spring 2025
Testudo

Learning Objectives

This course builds on the foundation of semiconductor component physics developed in ENEE 313 and applies this foundation to achieve an understanding of the broad array of components in wide-spread use in diverse areas of electrical engineering today. It is assumed that the student has a basic understanding of pn-junction transport and of the function of bipolar and MOS transistor operation. This course expands on this base by describing the function and application of a much broader class of components. The idea is to allow students to develop a conceptual understanding of how materials can be manipulated to achieve a given electronic function

Topics Covered

  • Schottky effect and Zener tunneling
  • The concept of differential negative resistance (DNR) and its application
  • to microwave devices
  • Advanced approaches to transistor operation: DMOS, VMOS, thin film transistors,
  • Heterostructures and MODFETS
  • Non-volatile memories
  • Power devices: Silicon controlled rectifiers, power transistor design
  • Component Integration and thermal management
  • Photonic devices: Light emitting diodes and solid-state lasers
  • Particle and radiation sensors
  • Imagers: CCDs and active pixel arrays
  • Noise processes in solid-state components